MANUFACTURING METHOD OF NANOWIRE ARRAY

摘要

The present invention relates to a method for manufacturing a nanowire array by using induced growth, wherein inorganic nanowires of a nitride are grown from a seed nitride by forming the seed nitride on a sapphire or silicon substrate, forming an organic nanowire pattern and a dielectric nano-tunnel having the same as a template on top thereof and using the same as an induced-growth mask. The present invention comprises the steps of: forming an organic nanowire array as a template on top of a base layer including a substrate, which is composed of any one among materials capable of selectively growing a nitride, by using a nozzle printing method or the like; forming a dielectric substance on top of the organic nanowire array via a method with an excellent step coverage such as PECVD and sputtering; forming a dielectric nano-tunnel by removing organic nanowires; forming seed crystals for induced growth; and conducting the induced growth of nanowires; and removing the dielectric substance.