发明名称 Trace pattern for touch-sensing application
摘要 One embodiment of a capacitive sensor array comprises a plurality of row sensor elements including a first row sensor element, a plurality of column sensor elements including a first column sensor element, and a plurality of unit cells, wherein a first unit cell contains an intersection between the first row sensor element and the first column sensor element, and wherein a ratio between 1) a boundary length between the first row sensor element and the first column sensor element within the first unit cell and 2) a perimeter of the first unit cell is greater than √{square root over (2)}/2.
申请公布号 US9405408(B2) 申请公布日期 2016.08.02
申请号 US201113008014 申请日期 2011.01.18
申请人 Creator Technology B.V. 发明人 Peng Tao;Weng XiaoPing;Shao DangDang;Deng Yingzhu
分类号 G06F3/041;G06F3/044 主分类号 G06F3/041
代理机构 Jianq Chyun IP Office 代理人 Jianq Chyun IP Office
主权项 1. A capacitive sensor array, comprising: a plurality of row sensor elements including a first row sensor element; a plurality of column sensor elements including a first column sensor element; and a plurality of unit cells, wherein each of the plurality of unit cells contains an intersection between one of the plurality of row sensor elements and one of the plurality of column sensor elements, and wherein a first unit cell contains a first intersection between the first row sensor element and the first column sensor element, wherein one of the first row sensor element and the first column sensor element is configured to provide a signal that is based on a mutual capacitance associated with the first unit cell, wherein a ratio between 1) a boundary length between the first row sensor element and the first column sensor element within the first unit cell and 2) a perimeter of the first unit cell is greater than √{square root over (2)}/2, wherein the first column sensor element includes at least a first cutout area which reduce a self capacitance of the first column sensor element, and wherein the first row sensor element includes at least a second cutout area corresponding to the first cutout area, and the second cutout area reduces a self capacitance of the first row sensor element.
地址 Tilburg NL