| 发明名称 | Method to define multiple layer patterns with a single exposure by charged particle beam lithography | ||
| 摘要 | The present disclosure provides a method that includes forming a first patternable material layer on a substrate; forming a second patternable material layer over the first patternable material layer; and performing a charged particle beam lithography exposure process to the first patternable material layer and the second patternable material layer, thereby forming a first latent feature in the first patternable material layer and a second latent feature in the second patternable material layer. | ||
| 申请公布号 | US9405195(B2) | 申请公布日期 | 2016.08.02 |
| 申请号 | US201514747054 | 申请日期 | 2015.06.23 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Lu Yen-Cheng;Shih Chih-Tsung;Chen Jeng-Horng;Yu Shinn-Sheng;Yen Anthony |
| 分类号 | G03F7/20;G03F7/095;G03F7/36;G03F1/78;H01L21/027;H01L21/311;H01L21/768;H01L21/033 | 主分类号 | G03F7/20 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A method, comprising: forming a first patternable material layer on a substrate; forming a second patternable material layer over the first patternable material layer; and performing a charged particle beam lithography exposure process to the first patternable material layer and the second pattemable material layer, thereby forming a first latent feature in the first patternable material layer and a second latent feature in the second patternable material layer. | ||
| 地址 | Hsin-Chu TW | ||