发明名称 EVALUATION DEVICE FOR OXIDE SEMICONDUCTOR THIN FILM
摘要 An evaluation device for an oxide semiconductor thin film includes a first excitation light irradiation unit configured to irradiate a measurement region of a sample with first excitation light and to generate an electron-hole pair, an electromagnetic wave irradiation unit configured to irradiate with electromagnetic wave, a reflecting electromagnetic wave intensity detection unit configured to detect intensity of a reflected electromagnetic wave, a second excitation light irradiation unit configured to irradiate the sample with second excitation light and to generate photoluminescence light, an emission intensity measurement unit configured to measure emission intensity of the photoluminescence light, and an evaluation unit configured to evaluate mobility and stress stability. The first excitation light irradiation unit and the second excitation light irradiation unit are the same or different excitation light radiation units.
申请公布号 US2016223462(A1) 申请公布日期 2016.08.04
申请号 US201414917452 申请日期 2014.09.10
申请人 KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.) 发明人 HAYASHI Kazushi;KISHI Tomoya
分类号 G01N21/64;G01N22/00 主分类号 G01N21/64
代理机构 代理人
主权项 1. An evaluation device for an oxide semiconductor thin film, comprising: a first excitation light irradiation unit configured to irradiate a measurement region of a sample wherein an oxide semiconductor thin film is formed with first excitation light and to generate an electron-hole pair in the oxide semiconductor thin film; an electromagnetic wave irradiation unit configured to irradiate the measurement region of the sample with electromagnetic wave; a reflecting electromagnetic wave intensity detection unit configured to detect intensity of the electromagnetic wave being reflected from the sample and being varied by way of the irradiation with the first excitation light; a second excitation light irradiation unit configured to irradiate the sample with second excitation light and to generate photoluminescence light in the oxide semiconductor thin film; an emission intensity measurement unit configured to measure emission intensity of the photoluminescence light; and an evaluation unit configured to evaluate mobility and stress stability of the sample according to data detected by the reflecting electromagnetic wave intensity detection unit and data measured by the emission intensity measurement unit, wherein the first excitation light irradiation unit and the second excitation light irradiation unit are the same or different excitation light radiation units.
地址 Hyogo JP