SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

A semiconductor integrated circuit device, including a semiconductor layer of a first conductivity type, a first well region of a second conductivity type, a second well region of the second conductivity type, and a third well region of the first conductivity type. The device further includes an isolation region electrically isolating a predetermined region in the first well region, a first high-concentration region of the second conductivity type, disposed outside the isolation region and inside one of the first well region and the second well region, and a second high-concentration region of the second conductivity type, disposed inside the isolation region and inside one of the first well region and the second well region. The first and second high-concentration regions each have an impurity concentration that is higher than that of the first well region.

主权项

1. A semiconductor integrated circuit device, comprising:
a semiconductor layer of a first conductivity type; a first well region of a second conductivity type, disposed in the semiconductor layer at a first surface side thereof; a second well region of the second conductivity type, disposed in the semiconductor layer at the first surface side thereof, the second well region contacting the first well region and surrounding a periphery of the first well region, and having an impurity concentration that is lower than that of the first well region; a third well region of the first conductivity type, disposed in the semiconductor layer at the first surface side thereof, the third well region contacting the second well region and surrounding a periphery of the second well region; an isolation region electrically isolating a predetermined region in the first well region; a first high-concentration region of the second conductivity type, disposed outside the isolation region and inside one of the first well region and the second well region, the first high-concentration region having an impurity concentration that is higher than that of the first well region; and a second high-concentration region of the second conductivity type, disposed inside the isolation region and inside one of the first well region and the second well region, the second high-concentration region having an impurity concentration that is higher than that of the first well region.