发明名称 BIAS-BOOSTING CIRCUIT WITH A MODIFIED WILSON CURRENT MIRROR CIRCUIT FOR RADIO FREQUENCY POWER AMPLIFIERS
摘要 A current mirror circuit for biasing a power amplifier includes a modified Wilson current mirror with a pair of first and second mirror transistors connected to a third transistor. The first mirror transistor is configured for operating in a saturation mode, with a gate voltage of the first mirror transistor being lower than a gate voltage of the power amplifier. The third transistor charges the power amplifier circuit during a positive half cycle of an input signal and the first mirror transistor discharges the power amplifier circuit during a negative half cycle of the input signal at different rates.
申请公布号 US2016308500(A1) 申请公布日期 2016.10.20
申请号 US201615130730 申请日期 2016.04.15
申请人 Morfis Semiconductor, Inc. 发明人 Luo Sifen;Xu Zhan;Chen Changli;Li Haitao;Chang Heng-chia;Wang Narisi;Yoon Jung Ho
分类号 H03F3/213;H03F1/02;H03F3/195 主分类号 H03F3/213
代理机构 代理人
主权项 1. A radio frequency (RF) power amplifier circuit including an input receptive to a signal, and an output, comprising: an input matching network connected to the input; an output matching network connected to the output; a power amplifier with a power amplifier input connected to the input matching network and a power amplifier output connected to the output matching network; and a bias boosting circuit connected to the power amplifier input, the bias boosting circuit comprising a modified Wilson current mirror with a pair of first and second mirror transistors connected to a third transistor, the first mirror transistor being configured for operating in a saturation mode and a gate voltage of the first mirror transistor being lower than a gate voltage of the power amplifier; wherein the third transistor charges the power amplifier circuit during a positive half cycle of the signal and the first mirror transistor discharges the power amplifier circuit during a negative half cycle of the signal at different rates.
地址 Irvine CA US