发明名称 SEMICONDUCTOR MEMORY DEVICE INCLUDING DUMMY MEMORY CELLS AND METHOD OF OPERATING THE SAME
摘要 A method of operating a semiconductor memory device including a plurality of cell strings coupled to dummy word lines and normal word lines includes performing a first sub-program operation on selected normal memory cells by sequentially applying first program pulses to a selected normal word line and performing a second sub-program operation on the selected normal memory cells by sequentially applying second program pulses greater than the first program pulses to the selected normal word line, wherein at least one of the dummy word lines is biased in a same manner as the selected normal word line whenever each of the first program pulses is applied to the selected normal word line.
申请公布号 US2016336071(A1) 申请公布日期 2016.11.17
申请号 US201614988518 申请日期 2016.01.05
申请人 SK hynix Inc. 发明人 PARK Kyoung Jin;BAE Sung Ho;HAN Byeong Il
分类号 G11C16/12;G11C16/34;G11C16/04 主分类号 G11C16/12
代理机构 代理人
主权项 1. A method of operating a semiconductor memory device including a plurality of cell strings coupled to dummy word lines and normal word lines, the method comprising: performing a first sub-program operation on selected normal memory cells by sequentially applying first program pulses to a selected normal word line; and performing a second sub-program operation on the selected normal memory cells by sequentially applying second program pulses greater than the first program pulses to the selected normal word line, wherein at least one of the dummy word lines is biased in a same manner as the selected normal word line whenever each of the first program pulses is applied to the selected normal word line.
地址 Icheon-si Gyeonggi-do KR