| 发明名称 |
MULTI-PORT NON-VOLATILE MEMORY |
| 摘要 |
A multi-port memory cell including: first and second magnetoresistive elements, each of which is programmable so as to adopt at least two resistive states, in which: the first magnetoresistive element is coupled with a first output line and is programmable by the direction of a current which is passed through same; and the second magnetoresistive element is coupled with a second output line and is arranged so as to be magnetically coupled with the first magnetoresistive element, the second magnetoresistive element being programmable by a magnetic field generated by the first magnetoresistive element. |
| 申请公布号 |
US2016336052(A1) |
申请公布日期 |
2016.11.17 |
| 申请号 |
US201415111189 |
申请日期 |
2014.12.15 |
| 申请人 |
COMMISSARIAT A L'ENERGIE ATOMIUE ET AUX ENERGIES ALTERNATIVES ;CENTRE NATIONAL DE LA RE-CHERCHE SCIENTIFIQUE |
发明人 |
Bernard-Granger Fabrice;Javerliac Virgile |
| 分类号 |
G11C11/16;H01L43/02;H01L43/08;H01L43/12;H01L27/22 |
主分类号 |
G11C11/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A multiport memory cell comprising:
first and second magnetoresistive elements each programmable to have one of at least two resistive states (Rmin, Rmax), wherein: the first magnetoresistive element is coupled to a first output line and is programmable by the direction of a current passed through it; and the second magnetoresistive element is coupled to a second output line and is arranged to be magnetically coupled to the first magnetoresistive element, the second magnetoresistive element being programmable by a magnetic field generated by the first magnetoresistive element. |
| 地址 |
Paris FR |
