发明名称 |
TRAPPED SACRIFICIAL STRUCTURES AND METHODS OF MANUFACTURING SAME USING THIN-FILM ENCAPSULATION |
摘要 |
Trapped sacrificial structures and thin-film encapsulation methods that may be implemented to manufacture trapped sacrificial structures such as relative humidity sensor structures, and spacer structures that protect adjacent semiconductor structures extending above a semiconductor die substrate from being contacted by a molding tool or other semiconductor processing tool in an area of a die substrate adjacent the spacer structures. |
申请公布号 |
US2016355397(A1) |
申请公布日期 |
2016.12.08 |
申请号 |
US201615243031 |
申请日期 |
2016.08.22 |
申请人 |
Semiconductor Manufacturing International Corporation |
发明人 |
Quevy Emmanuel P.;Nervegna Louis;Hui Jeremy R. |
分类号 |
B81C1/00;G01N27/22 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a trapped sacrificial structure, comprising:
providing a MEMS region over a substrate, the MEMS region including a MEMS structural layer; forming a first sacrificial layer over the MEMS structural layer; removing a part of the first sacrificial layer to leave at least a remaining portion of the first sacrificial layer disposed over the MEMS structural layer; forming a second sacrificial layer over the remaining portion of the first sacrificial layer; removing a part of the second sacrificial layer to leave a portion of the second sacrificial layer; forming an upper microshell layer over the remaining portions of the first and second sacrificial layers; creating one or more upper release holes in the upper microshell layer; and removing at least a part of the remaining portions of the first and/or second sacrificial layers through the upper release holes without removing a first sacrificial layer portion and/or a second sacrificial layer portion under the upper microshell layer to form at least one trapped sacrificial structure under the upper microshell layer. |
地址 |
Shanghai CN |