发明名称 TRAPPED SACRIFICIAL STRUCTURES AND METHODS OF MANUFACTURING SAME USING THIN-FILM ENCAPSULATION
摘要 Trapped sacrificial structures and thin-film encapsulation methods that may be implemented to manufacture trapped sacrificial structures such as relative humidity sensor structures, and spacer structures that protect adjacent semiconductor structures extending above a semiconductor die substrate from being contacted by a molding tool or other semiconductor processing tool in an area of a die substrate adjacent the spacer structures.
申请公布号 US2016355397(A1) 申请公布日期 2016.12.08
申请号 US201615243031 申请日期 2016.08.22
申请人 Semiconductor Manufacturing International Corporation 发明人 Quevy Emmanuel P.;Nervegna Louis;Hui Jeremy R.
分类号 B81C1/00;G01N27/22 主分类号 B81C1/00
代理机构 代理人
主权项 1. A method of forming a trapped sacrificial structure, comprising: providing a MEMS region over a substrate, the MEMS region including a MEMS structural layer; forming a first sacrificial layer over the MEMS structural layer; removing a part of the first sacrificial layer to leave at least a remaining portion of the first sacrificial layer disposed over the MEMS structural layer; forming a second sacrificial layer over the remaining portion of the first sacrificial layer; removing a part of the second sacrificial layer to leave a portion of the second sacrificial layer; forming an upper microshell layer over the remaining portions of the first and second sacrificial layers; creating one or more upper release holes in the upper microshell layer; and removing at least a part of the remaining portions of the first and/or second sacrificial layers through the upper release holes without removing a first sacrificial layer portion and/or a second sacrificial layer portion under the upper microshell layer to form at least one trapped sacrificial structure under the upper microshell layer.
地址 Shanghai CN