Integration Of Active Devices With Passive Components And MEMS Devices

摘要

Integration of active devices with passive components and MEMS devices is disclosed. An integrated semiconductor structure includes an active device having a device top electrode connected to a conductive jumper by a device-side via/interconnect metal stack. The integrated semiconductor structure also includes a passive component having a component bottom plate connected to the conductive jumper by a component side via/interconnect metal stack. The component bottom plate is situated at an intermediate metal level higher than the device top electrode, and the conductive jumper is situated at a connecting metal level higher than the component bottom plate. The conductive jumper reduces undesirable charge flow into the active device during fabrication of the passive component. The passive component can be, for example, a MEMS device.

主权项

1. A method of manufacturing an integrated semiconductor structure, the method comprising:
forming an active device; forming a first portion of a device-side via/interconnect metal stack, forming a passive component, a component-side via/interconnect metal stack and a second portion of said device-side via/interconnect metal stack; forming a conductive jumper to connect said component-side via/interconnect metal stack to said second portion of said device-side via/interconnect metal stack.