| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure capable of decreasing on-resistance and improving element characteristics by improving carrier mobility in a channel forming region of a vertical MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) employing a silicon carbide. SOLUTION: A channel layer 14 of a vertical SiCMOSFET is made into a p-type semiconductor by doping Al, and includes Si<SB>0.9</SB>Ge<SB>0.1</SB>C mixed crystal doped with Ge having a large ion radius and a narrow forbidden band, thereby making a lattice constant of a channel region large. Further, an impurity such as phosphor or nitrogen is doped to enable to supply electrons in a crystal. COPYRIGHT: (C)2007,JPO&INPIT |
