| 摘要 |
The present invention provides an optoelectronic device which includes a first electrode, a substrate on the first electrode; a buffer layer on the substrate, in which the buffer layer includes a first gallium nitride based compound layer on the substrate, a second gallium nitride based compound layer, and a II-V group compound layer between the first gallium nitride based compound layer and the second gallium nitride based compound layer; a first semiconductor conductive layer on the buffer layer; an active layer on the first semiconductor conductive layer, in which the active layer is an uneven Multi-Quantum Well; a semiconductor conductive layer on the active layer; a transparent layer on the second semiconductor conductive layer; and a second electrode on the transparent layer.
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