| 摘要 |
<P>PROBLEM TO BE SOLVED: To readily manufacture a semiconductor device wherein an IGBT and an FWD are integrated into a single semiconductor chip. <P>SOLUTION: A deep cathode region 32 is formed only in a scribe region 54 by diffusing an impurity from the surface side of a wafer, and then the cathode region 32 is exposed by grinding the wafer from its rear. Subsequently, a collector region 23 is formed at the ground rear of the wafer, followed by forming a rear electrode 42 for ohmic contact with the cathode region 32. Then, dicing is performed for separation into individual semiconductor chips 10, thereby obtaining the semiconductor device wherein the cathode region 32 passes through the chip from its surface to rear at its side face, with an anode region 31 integrating an FWD portion 12, with an edge 14 being interposed therebetween, into an IGBT portion 11. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
