| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, capable of suppressing occurrence of a well proximity effect. SOLUTION: The method for manufacturing a semiconductor device includes forming an anti-reflective coating BK on a main surface of a semiconductor substrate SUB. A resist pattern PR1 having an inclination widening toward a side of the semiconductor substrate SUB at a pattern end portion is formed on the anti-reflective coating BK. Ions are implanted into the main surface of the semiconductor substrate SUB using the resist pattern PR1 as a mask. COPYRIGHT: (C)2010,JPO&INPIT |
