Semiconductor device and a method of manufacturing the same

摘要

Disclosed herein is a semiconductor device, including: a mount body having a first principal surface on which a wiring pattern is formed; a semiconductor chip mounted above the principal surface of the mount body on which the wiring pattern is formed; an underfill material filled between the mount body and the semiconductor chip, thereby forming a fillet in an outer peripheral portion of the semiconductor chip; and an introduction portion formed outside a side portion, along which the fillet is formed so as to be longest, of four side portions which measure a chip mounting area, on the mount body, onto which the semiconductor chip is mounted, the introduction portion serving to introduce the underfill material between the mount body and the semiconductor chip.

主权项

1. A semiconductor device, comprising:
a mount body having a principal surface side with a wiring pattern formed on the principal surface side of the mount body; a passivation film formed on the principal surface side of the mount body and covering the wiring pattern, wherein the passivation film includes a stepped portion corresponding to wirings in the wiring pattern; a semiconductor chip mounted above the principal surface side of said mount body with said wiring pattern; a plurality of bumps, wherein the semiconductor chip is electrically and mechanically connected to the mount body by the bumps; an underfill material filled between said mount body and said semiconductor chip, thereby forming fillet in an outer peripheral portion of said semiconductor chip, wherein the underfill material lies between the semiconductor chip and the passivation film; an introduction portion formed in the passivation film formed on the principal surface of the mount body that is operable to route said underfill material between said mount body and said semiconductor chip, wherein the introduction portion is a convex-like shape formed on the principal surface side of the mount body, wherein the convex-like shape of the introduction portion is formed in a surface of the passivation film, wherein at least a first portion of the introduction portion lies in a first area between the mount body and the semiconductor chip, and wherein at least a second portion of the introduction portion lies in a second area that is not between the mount body and the semiconductor chip; and a derivation portion provided outside at least one side portion of three side portions except for the side portion outside which said introduction portion is formed, said derivation portion serving to introduce said underfill material introduced between said mount body and said semiconductor chip to an outer peripheral portion of said semiconductor chip.