| 发明名称 | Semiconductor device, related manufacturing method, and related electronic device | ||
| 摘要 | A method for manufacturing semiconductor device may include the following steps: performing an etching process to remove a sacrificial layer from a first composite structure, wherein the first composite structure includes a first substrate structure; performing a heat treatment to release a gas from the first composite structure; performing a cleaning process to remove an oxide layer from the first composite structure; and combining the first composite structure with a second composite structure that includes a second substrate structure and an electronic component positioned on the second substrate substructure, such that the first substrate structure is combined with the second substrate structure to form an enclosure structure that encloses the electronic component. | ||
| 申请公布号 | US9425068(B2) | 申请公布日期 | 2016.08.23 |
| 申请号 | US201514738513 | 申请日期 | 2015.06.12 |
| 申请人 | Semiconductor Manufacturing International (Shanghai) Corporation | 发明人 | Zheng Chao |
| 分类号 | H01L23/04;H01L23/06;H01L23/26;H01L21/54;H01L21/50 | 主分类号 | H01L23/04 |
| 代理机构 | Innovation Counsel LLP | 代理人 | Innovation Counsel LLP |
| 主权项 | 1. A method for manufacturing semiconductor device, the method comprising: performing an etching process to remove a sacrificial layer from a first composite structure, wherein the first composite structure includes a first substrate structure; performing a heat treatment to release a gas from the first composite structure; performing a cleaning process to remove an oxide layer from the first composite structure; and combining the first composite structure with a second composite structure that includes a second substrate structure and an electronic component positioned on the second substrate structure, such that the first substrate structure is combined with the second substrate structure to form an enclosure structure that encloses the electronic component. | ||
| 地址 | Shanghai CN | ||