THIN FILM TRANSISTOR SUBSTRATE, MANUFACTURE METHOD THEREOF AND LIQUID CRYSTAL DISPLAY

摘要

The present invention provides a manufacture method of a thin film transistor substrate: forming a first metal layer, a first chemical vapor deposition layer, a second metal layer and a second chemical vapor deposition layer on a substrate; forming photoresistor on the second chemical vapor deposition layer; implementing exposure and development to the photoresistor; implementing via etching to a via area where the photoresistor on the second chemical vapor deposition layer is removed; implementing photoresistor ashing to remove the photoresistor in the area of the common capacitor; etching the silicon nitride layer; forming a pixel electrode layer. The present invention is capable of promoting video quality and saving the backlight power consumption.

主权项

1. A manufacture method of a thin film transistor substrate, the manufacture method of the thin film transistor substrate comprising steps of:
providing a substrate to sequentially form a first metal layer, a first chemical vapor deposition layer, a second metal layer and a second chemical vapor deposition layer on a surface of the substrate; wherein the first metal layer comprises a lower electrode of a common capacitor, and the first chemical vapor deposition layer and the second chemical vapor deposition layer respectively comprises a silicon nitride layer; forming photoresistor on the second chemical vapor deposition layer; implementing exposure and development to the photoresistor with a halftone mask, and a position corresponding to the halftone mask is an area of the common capacitor; implementing via etching to a via area where the photoresistor on the second chemical vapor deposition layer is removed; implementing photoresistor ashing to remove the photoresistor in the area of the common capacitor; etching the silicon nitride layer in the area of the common capacitor; stripping rest of the photoresistor; forming a pixel electrode layer, wherein the pixel electrode layer comprises an upper electrode of the common capacitor.