| 发明名称 |
Devices with Semiconductor Hyperbolic Metamaterials |
| 摘要 |
A hyperbolic metamaterial assembly comprising alternating one or more first layers and one or more second layers forming a hyperbolic metamaterial, the one or more first layers comprising an intrinsic or non-degenerate extrinsic semiconductor and the one or more second layers comprising a two-dimensional electron or hole gas, wherein one of in-plane or out-of-plane permittivity of the hyperbolic metamaterial assembly is negative and the other is positive. |
| 申请公布号 |
US2016274301(A1) |
申请公布日期 |
2016.09.22 |
| 申请号 |
US201615075580 |
申请日期 |
2016.03.21 |
| 申请人 |
The Government of the United States of America, as represented by the Secretary of the Navy |
发明人 |
Mastro Michael A. |
| 分类号 |
G02B6/122;G02F1/017;G02B6/42;G02B6/126;G02B6/12 |
主分类号 |
G02B6/122 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A hyperbolic metamaterial assembly comprising alternating one or more first layers and one or more second layers forming a hyperbolic metamaterial, the one or more first layers comprising an intrinsic or non-degenerate extrinsic semiconductor and the one or more second layers comprising a two-dimensional electron or hole gas,
wherein one of in-plane or out-of-plane permittivity of the hyperbolic metamaterial assembly is negative and the other is positive. |
| 地址 |
Arlington VA US |
