METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE

摘要

A method for forming a semiconductor device structure is provided. The method includes performing a first process over a surface of a semiconductor substrate. The method includes forming a protective layer over the surface of the semiconductor substrate in a first chamber after the first process. The method includes performing a first transferring process to transfer the semiconductor substrate from the first chamber into a substrate carrier. The method includes performing a second transferring process to transfer the semiconductor substrate from the substrate carrier into a second chamber. The semiconductor substrate is located in the substrate carrier during a substantially entire first time interval between the first transferring process and the second transferring process. The method includes removing the substantially entire protective layer in the second chamber. The method includes performing a second process over the surface of the semiconductor substrate.

主权项

1. A method for forming a semiconductor device structure, comprising:
performing a first process over a top surface of a semiconductor substrate; after the first process, forming a protective layer over the top surface and a sidewall of the semiconductor substrate in a first chamber; performing a first transferring process to transfer the semiconductor substrate from the first chamber into a substrate carrier; performing a second transferring process to transfer the semiconductor substrate from the substrate carrier into a second chamber, wherein the semiconductor substrate is located in the substrate carrier during an entire first time interval between the first transferring process and the second transferring process; removing the protective layer in the second chamber; and after the removal of the protective layer, performing a second process over the top surface of the semiconductor substrate.