| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent field concentration around a dynamic clamp circuit including a dynamic clamp diode thereby to prevent decrease in withstanding voltage and increase in leakage current.SOLUTION: A semiconductor device comprises a polysilicon dynamic clamp diode 24a arranged in a region other than a voltage withstanding structure 20. This arrangement causes the voltage withstanding structure 20 to have no place where field concentration occurs thereby to enable prevention of decrease in withstanding voltage and increase in leakage current. |
