NON-VOLATILE RESISTIVE SWITCHING MEMORY DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

A non-volatile resistive switching memory device comprises an insulating substrate (10), a lower electrode (11), a lower graphene barrier layer (12), a resistive switching functional layer (13), an upper graphene barrier layer (14) and an upper electrode (15), wherein under the action of an external electric field, the lower and/or the upper graphene barrier layers are capable of preventing the metal ions/atoms in the metal materials forming the upper and the bottom electrodes from diffusing into the resistive switching functional layers. On the basis of the non-volatile resistive switching memory device and a manufacturing method therefor, a single layer or multiple layers of graphene films are added between the upper and the lower metal electrodes and the resistive switching functional layer as metal ion/atom barrier layers, and the barrier layers are capable of preventing the metal ions/atoms in the metal electrodes from entering the resistive switching functional layers in a resistive switching memory device programming/erasing process, so that the reliability of the non-volatile resistive switching memory device is improved.