| 摘要 |
PROBLEM TO BE SOLVED: To enable performing highly accurate and high speed read-out by preventing destruction of bias effect and tunnel barrier when voltage applied to a magneto resistive element is kept at a low level and a tunnel type magneto resistive element is used as a storage element. SOLUTION: Potentials of all connected sense line 121-124 and potentials of all work lines 133, 136 being not selected are kept at an equal potential, a selected work line 134 is grounded, a capacitor 114 previously charged to high voltage is connected to the sense line 122 through a MOS transistor 118 as a voltage drop element, and capacitor 114 is connected to them so that the capacitor 114 can discharge charged electric charges through the MOS transistor 118, the sense line 122, a magneto resistive element 142, and the word line 134.
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