| 摘要 |
PROBLEM TO BE SOLVED: To perform selective growth of a solid on a fine scale of nano meter with high accuracy in a short time, by readily conducting drawing of a high resolution pattern at a high speed and a low cost, when a solid s selectively grown on a substrate surface. SOLUTION: In this method for growing a solid selective in a defined region on a basic material 1, a silicon nitride film 2 formed on the substrate surface 1 is oxidized locally, according to a desired pattern until the basic material 1 is reached to form a locally oxidized part 3, the locally oxidized part 3 is removed by etching, to form a recessed region 9 exposing the substrate surface 1 on the bottom part 9a thereof, the surfaces of at least the recessed region 9 and the silicon nitride film 2 in the vicinity thereof are coated with silicon dioxide 5 to forma two layer mask, the substrate surface is exposed as a defined region on the bottom part 9a of the recessed region 9, and a solid is selectively grown in the defined region.
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