发明名称 STORAGE METHOD OF RESIST SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a storage method of a resist substrate capable of improving stability of resolution and uniformity for a large area when a resist constituted by containing an incomplete oxide of a transition metal is applied to thermal lithography.SOLUTION: The storage method of a resist substrate includes storing in an environment whose relative humidity is 30% or lower a resist substrate containing a resist layer containing an incomplete oxide of a transition metal and a substrate on a surface of which the resist layer is deposited.
申请公布号 JP2014013864(A) 申请公布日期 2014.01.23
申请号 JP20120151416 申请日期 2012.07.05
申请人 ASAHI KASEI E-MATERIALS CORP 发明人 YAMAGUCHI FUJITO
分类号 H01L21/027;G03F7/004;G03F7/26 主分类号 H01L21/027
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