发明名称 |
STORAGE METHOD OF RESIST SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To provide a storage method of a resist substrate capable of improving stability of resolution and uniformity for a large area when a resist constituted by containing an incomplete oxide of a transition metal is applied to thermal lithography.SOLUTION: The storage method of a resist substrate includes storing in an environment whose relative humidity is 30% or lower a resist substrate containing a resist layer containing an incomplete oxide of a transition metal and a substrate on a surface of which the resist layer is deposited. |
申请公布号 |
JP2014013864(A) |
申请公布日期 |
2014.01.23 |
申请号 |
JP20120151416 |
申请日期 |
2012.07.05 |
申请人 |
ASAHI KASEI E-MATERIALS CORP |
发明人 |
YAMAGUCHI FUJITO |
分类号 |
H01L21/027;G03F7/004;G03F7/26 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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