| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem of a semiconductor device, in which a silicon nitride film generally used as a passivation film formed by a low-pressure CVD method has approximately 10% variation in film thickness, and the use of this film for a reflection liquid crystal panel causes a large change in reflectance due to the variation in film thickness of the passivation film, thereby changing a refractive index of the liquid crystal.SOLUTION: A liquid crystal panel substrate comprises: reflection electrodes (14) formed in matrix on a substrate (1); transistors respectively formed corresponding to the reflection electrodes so that a voltage is applied to the reflection electrodes through the transistors. A silicon oxide film of 500 to 2000 Angstrom film thickness is used as the passivation film (17), and the film thickness is set to be an appropriate value according to the wavelength of incident light. |
