| 摘要 |
Provided is a method for evaluating a semiconductor wafer. In the method, at least an oxide film is formed on the surface of the semiconductor wafer, windows are opened at two areas by partially removing the oxide film, a dopant of a conductivity type different from that of the semiconductor to be evaluated is diffused from the windows at the two areas, a PN junction is formed by forming diffusion regions in the semiconductor to be evaluated, a leak current is measured and/or DLTS measurement is performed between the two diffusion regions, and the semiconductor wafer is evaluated. Thus, the internal quality of the semiconductor wafer can be easily evaluated by employing the junction leak current measurement and the DLTS measurement. Specifically, a method for evaluating not only the insides of a PW and an EPW but also the inside of an SOI layer of an SOI wafer is provided. |
