| 摘要 |
Low temperature diffusion bonding methods and target/backing plate assemblies bonded by the methods are disclosed. In accordance with the methods, copper and/or cobalt targets (12) are bonded to backing plate members (16) via the use of an interlayer (14) selected from the group consisting of group Ib or group VIII metals. The interlayer (14) is interposed between intended bonding surfaces of the target (12) and the backing plate (16), and the assembly (10) is diffusion bonded at low temperatures of about 190 DEG C - 400 DEG C. The method results in increased tensile strength of the bonded assembly while not, in the case of copper targets, resulting in undesirable grain growth. When cobalt targets are bonded in accordance with the invention, desirable magnetic properties, such as magnetic pass through flux, are maintained while a strong bond is achieved. |
