Semiconductor transistor device

摘要

According to one embodiment, a semiconductor device includes first electrode and second electrodes, first, second, third, fifth, and fourth semiconductor regions, a third electrode, and a second insulating film. The first semiconductor region is provided between the first and second electrodes. The second semiconductor region is provided between the first semiconductor region and the first electrode. The third semiconductor region is provided between the first semiconductor region and the second electrode. The fifth semiconductor region is provided between the first semiconductor region and the second electrode. The fourth semiconductor region is provided between the third semiconductor region and the second electrode and between the fifth semiconductor region and the second electrode. The third electrode contacts the first, third, and fourth semiconductor regions via a first insulating film. The second insulating film contacts the first, fifth, and fourth semiconductor regions.

主权项

1. A semiconductor device, comprising:
a first electrode; a second electrode; and a first semiconductor region of a first conductivity type provided between the first electrode and the second electrode; a second semiconductor region of the first conductivity type provided between the first semiconductor region and the first electrode, the second semiconductor region having a higher impurity concentration than the first semiconductor region; a third semiconductor region of a second conductivity type provided between the first semiconductor region and the second electrode; a fifth semiconductor region of the second conductivity type provided between the first semiconductor region and the second electrode; a fourth semiconductor region of the first conductivity type provided between the third semiconductor region and the second electrode and between the fifth semiconductor region and the second electrode, the fourth semiconductor region having a higher impurity concentration than the first semiconductor region; a third electrode in contact with the first semiconductor region, the third semiconductor region, and the fourth semiconductor region via a first insulating film; and a second insulating film in contact with the first semiconductor region, the fifth semiconductor region, and the fourth semiconductor region, an impurity concentration of a portion where the fifth semiconductor region is in contact with the second insulating film is lower than an impurity concentration of a portion where the fifth semiconductor region on a side of the first electrode is in contact with the first semiconductor region.