CMOS image sensor with epitaxial passivation layer

摘要

The present disclosure provides a complimentary metal-oxide-semiconductor (CMOS) image sensor (CIS) device. In accordance with some embodiments, the device includes a semiconductor region having a front surface and a back surface; a light-sensing region extending from the front surface towards the back surface within the semiconductor region; a gate stack formed over the semiconductor region; and at least one epitaxial passivation layer disposed at least one of over and below the light-sensing region. In some embodiments, the at least one epitaxial passivation layer includes a p-type doped silicon (Si) layer.

主权项

1. A complimentary metal-oxide-semiconductor (CMOS) image sensor (CIS) device, comprising:
a semiconductor region having a front surface and a back surface; a light-sensing region extending from the front surface towards the back surface within the semiconductor region; a first passivation layer disposed over the light-sensing region; and a gate stack formed over an area of the semiconductor region that is free of the first passivation layer, wherein the first passivation layer includes a p-type doped silicon (Si) layer, and wherein the semiconductor region includes a front adsorption layer, the first passivation layer being disposed on the front adsorption layer.