| 摘要 |
A CMOS process for manufacturing an integrated gas sensor (35) with fully CMOS-compatible process steps, envisages: providing a supporting layer assembly (11) having semiconductor material and a top surface (11a); forming a first (13a) and a second (13b) electrode portions above the top surface (11a) of the supporting layer assembly (11); forming a dielectric layer (16) covering the first (13a) and second (13b) electrode portions; forming a first (18a) and a second (18b) contact vias, through the dielectric layer (16), reaching the first (13a) and, respectively, second (13b) electrode portion; and forming a gas sensing element (20) on the dielectric layer (16), having a first (20a) and a second (20b) end portions in contact with the first (18a) and, respectively, second (18b) contact vias. |
