| 摘要 |
A surface is placed into a deposition chamber. A tin layer is formed on the surface, in which forming the tin layer includes providing a precursor into the deposition chamber for a first time period, wherein the precursor comprises one of tetrakis (dimethylamino) tin (TDMASn) or tin tetrachloride (SnCl4), providing an inert gas into the deposition chamber for a second time period, providing a hydrogen reactant into the deposition chamber for a third time period, and providing the inert gas into the deposition chamber for a fourth time period. The first, second, third, and fourth time periods form one atomic layer deposition (ALD) cycle. The surface may be an exposed surface of a lead free metal. |
