| 摘要 |
Disclosed is a light emitting device having a crystal structure with a minimized stacking fault, comprising: a first conductivity-type semiconductor layer having an m-plane growth surface (including a surface having a predetermined off angle from an m plane); a stacking fault suppression (SFS) layer positioned on the first conductivity-type semiconductor layer; an active layer positioned on the SFS layer; and a second conductivity-type semiconductor layer positioned on the active layer. The SFS layer has a structure in which a first nitride layer and a second nitride layer having band gap energy smaller than that of the first nitride layer and including indium (In) are stacked one or more cycles. The second nitride layer includes a lower region and an upper region, and here, the lower region and the upper region have a relation satisfying a condition of Equation 1 below. When In atom density standard deviation of the upper region per unit volume (Inm^3)/ In atom density standard deviation of the lower region per unit volume (Inm^3)= R_D, R_D is equal to or greater than 0.8 and smaller than 1.05. |
