发明名称 |
ADJUSTING RESISTIVE MEMORY WRITE DRIVER STRENGTH BASED ON A MIMIC RESISTIVE MEMORY WRITE OPERATION |
摘要 |
Aspects of adjusting resistive memory write driver strength based on a mimic resistive memory write operation are disclosed. In one aspect, a write driver adjustment circuit is provided to adjust a write current provided by a write driver to a resistive memory for write operations. The write driver adjustment circuit includes a mimic write driver configured to provide a mimic write current that mimics the write current provided to the resistive memory. The mimic write current is applied to a mimic resistive memory that contains mimic resistive memory elements that mimic a resistance distribution of the resistive memory. When the mimic write current is applied, a mimic voltage is generated across the mimic resistive memory elements. The write driver adjustment circuit is configured to adjust the write current based on the mimic voltage so that the write current is sufficient for write operations, but low enough to reduce breakdown. |
申请公布号 |
WO2016130305(A1) |
申请公布日期 |
2016.08.18 |
申请号 |
WO2016US14689 |
申请日期 |
2016.01.25 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
KIM, Taehyun;KIM, Jung Pill;KIM, Sungryul |
分类号 |
G11C11/16 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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