发明名称 SYSTEM-ON-CHIP DEVICES AND METHODS OF DESIGNING A LAYOUT THEREFOR
摘要 A system-on-chip device may include a substrate with an active pattern, a gate electrode crossing the active pattern and extending in a first direction, and a first metal layer electrically connected to the active pattern and the gate electrode. The first metal layer may include a first metal line extending in the first direction and a second metal line spaced apart from the first metal line in the first direction to extend in a second direction crossing the first direction. The first and second metal lines may include first and second sidewalls parallel to the second direction, the first and second sidewalls may face each other, and the first sidewall may have a length that is two or three times a minimum line width.
申请公布号 US2016254256(A1) 申请公布日期 2016.09.01
申请号 US201615046200 申请日期 2016.02.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 BAEK SANGHOON;DO JUNG-HO;SONG TAEJOONG;YANG GIYOUNG;LEE SEUNGYOUNG;LIM JINYOUNG
分类号 H01L27/02;H01L23/522;H01L27/088;H01L23/528 主分类号 H01L27/02
代理机构 代理人
主权项 1. A system-on-chip device, comprising: a substrate with an active pattern; a gate electrode crossing the active pattern and extending in a first direction parallel to a top surface of the substrate; and a first metal layer electrically connected to the active pattern and the gate electrode, wherein: the first metal layer comprises: a first metal line extending in the first direction; anda second metal line spaced apart from the first metal line in the first direction to extend in a second direction crossing the first direction, the first metal line comprises a first sidewall parallel to the second direction, the second metal line comprises a second sidewall parallel to the second direction, the first sidewall and the second sidewall face each other, and the first sidewall has a length that is two or three times a minimum line width.
地址 SUWON-SI KR