发明名称 気相成長装置
摘要 PROBLEM TO BE SOLVED: To provide a vapor-phase growth device capable of reducing in-plane temperature variations of a substrate to be heated while suppressing damage of a substrate position regulation member body for preventing a deposit from being deposited around an orientation flat without depending on a size of an aperture of the substrate including the orientation flat.SOLUTION: The vapor-phase growth device comprises a substrate position regulation member 26 including a substrate position regulation member body 27 and a cut portion which cuts a part of the substrate position regulation member body 27. The substrate position regulation member body 27 includes: a ring-shaped first member 27-1 which is disposed on a top face 21a of a substrate placement member 21 which is positioned outside of a substrate placement surface 21a-1, and surrounds the outer circumference of a substrate 23; and a second member which covers the top face 21a of the substrate placement member 21 positioned between an orientation flat 23-1 of the substrate 23 disposed on the substrate placement surface 21a-1 and the first member 27-1 and is integrated with the first member.
申请公布号 JP6013155(B2) 申请公布日期 2016.10.25
申请号 JP20120260140 申请日期 2012.11.28
申请人 大陽日酸株式会社 发明人 徳永 裕樹;田渕 俊也;池永 和正
分类号 H01L21/205;C23C16/458;H01L21/683 主分类号 H01L21/205
代理机构 代理人
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