发明名称 Systems and Methods for Utilizing Wear Leveling Windows with Non-Volatile Memory Systems
摘要 Systems and methods for utilizing wear leveling windows with non-volatile memory systems are disclosed. In one implementation, a memory management module of a non-volatile memory system compares a metric reflecting wear of a memory block to a wear leveling window and determines whether a wear leveling indicator associated with the memory block restricts performing a wear leveling operation on the memory block. The memory management module performs a wear leveling operation on the memory block in response to determining that the metric reflecting wear of the memory block falls outside the wear leveling window and determining that the wear leveling indicator does not restrict performing a wear leveling operation on the memory block. After performing the wear leveling operation, the memory management module places the memory block on a free block list.
申请公布号 US2016335178(A1) 申请公布日期 2016.11.17
申请号 US201514710135 申请日期 2015.05.12
申请人 SanDisk Technologies Inc. 发明人 Patel Leena
分类号 G06F12/02 主分类号 G06F12/02
代理机构 代理人
主权项 1. In a memory management module of a non-volatile memory system, the non-volatile memory system comprising a non-volatile memory that comprises a plurality of memory blocks, a method comprising: comparing a program/erase cycle count associated with a memory block of the non-volatile memory system to a wear leveling window, the wear leveling window comprising a ceiling limit and a floor limit; determining whether a wear leveling indicator associated with the memory block restricts performing a wear leveling operation on the memory block; performing a wear leveling operation on the memory block in response to determining that the program/erase cycle count associated with the memory block is within a defined range of one of the ceiling limit or the floor limit of the wear leveling window and determining that the wear leveling indicator associated with the memory block does not restrict performing a wear leveling operation on the memory block; and placing the memory block on a free block list after the wear leveling operation is performed on the memory block.
地址 Plano TX US