INFORMATION PROCESSING STRUCTURE

摘要

An information processing structure having a single-electron circuit stably operating at high speed by single-electron action is constituted by forming a plurality of quantum dots (13) of a nanometer-scale just above a gate electrode (12) of a microminiaturized MOSFET (11), constructing an energy barrier between the quantum dots and the gate electrode between which electrons can directly tunnel, and representing information by the total number of electrons migrating between the quantum dots and the gate electrode, wherein a power source electrode (14) which serves as a power source is provided in contact with the quantum dots between the quantum dots and the power source electrode (14) in such a way that an energy barrier through which electrons can directly tunnel is structure, two information electrodes (15) are formed in contact with a quantum dot in such a way that the quantum dot and the information electrode are capacitively coupled, and electrons migrate between the power source electrode and the gate electrode through the quantum dots by the Coulomb blockade phenomenon in accordance with the electric potential determined by the information electrodes.