| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
The invention relates to a method for forming connection holes reliably by making contact resistance low and uniform in semiconductor devices. Insulating layer 3, that includes SOG layer 7, is plasma etched using an etching gas with a small quantity of a gas with a low C/F ratio, such as CHF3, mixed with a gas with a high C/F ratio, such as C4F8/Ar/O2 at a ratio of 1:3.
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| 申请公布号 |
US2001042919(A1) |
申请公布日期 |
2001.11.22 |
| 申请号 |
US19990387477 |
申请日期 |
1999.09.01 |
| 申请人 |
TOMITA MANABU;HAYAKAWA TAKASHI;YASUDA MASAYUKI;NISHIMURA MICHIO;OHTSUKA MINORU;KOJIMA MASAYUKI;YAMAZAKI KAZUO |
发明人 |
TOMITA MANABU;HAYAKAWA TAKASHI;YASUDA MASAYUKI;NISHIMURA MICHIO;OHTSUKA MINORU;KOJIMA MASAYUKI;YAMAZAKI KAZUO |
| 分类号 |
H01L21/302;H01L21/3065;H01L21/311;H01L21/3213;H01L21/768;H01L23/532;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/302 |
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