| 摘要 |
The invention relates to a semiconductor device, in particular a Schottky hybrid diode with a guard ring (S). The semiconductor device comprises a semiconductor substrate (1), an epitaxial layer (2) on which an insulating layer (3) with an opening (10) is deposited, with a Schottky metal layer (9) covering the epitaxial layer (2) lying at the bottom of the opening (10), and with an annular semiconductor region (4) which is present in the epitaxial layer (2). A doping region (6) is present in the epitaxial layer (2) along the outer contour of the semiconductor device, and in addition an oxide layer (8) is present on the epitaxial layer (2).
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