发明名称 Semiconductor integrated circuit device
摘要 An inventive semiconductor integrated circuit device includes: an external connection terminal; an electrostatic discharge protection circuit; an output circuit; an output prebuffer circuit; an input prebuffer circuit; an internal circuit; an inter-power supply electrostatic discharge protection circuit; and a substrate potential control circuit. The substrate potential control circuit includes a capacitor and a resistor. The inter-power supply electrostatic discharge protection circuit includes an NMIS transistor. When a positive surge is applied to the external connection terminal, the substrate potential of the NMIS transistor is also increased. Thus, the NMIS transistor is turned ON, and the positive electrical charge supplied to the external connection terminal is discharged toward a ground line.
申请公布号 US2005040466(A1) 申请公布日期 2005.02.24
申请号 US20040913356 申请日期 2004.08.09
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 ARAI KATSUYA;KOGAMI TOSHIHIRO;YABU HIROAKI
分类号 H01L27/04;H01L21/822;H01L21/8238;H01L23/62;H01L27/02;H01L27/06;H01L27/092;(IPC1-7):H01L23/62 主分类号 H01L27/04
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