发明名称 |
DEVELOPING METHOD FOR IMMERSION LITHOGRAPHY, SOLVENT USED FOR THE DEVELOPING METHOD AND ELECTRONIC DEVICE USING THE DEVELOPING METHOD |
摘要 |
A developing method for immersion lithography is provided, realizing a process that is simple and low-cost and enables high repellency sufficient to allow high-speed scanning. The developing method for immersion lithography improved by inexpensive material without introducing any new facility, a solution to be used in the developing method, and an electronic device formed by using the developing method are provided. The developing method for immersion lithography is a method of developing for immersion lithography of an electronic device with a resist containing a surface segregation agent and chemically-amplified resist, including the step of development with alkali immersion, characterized by the dissolving and removing step, conducted using a dissolving and removing solution that selectively dissolves and removes the surface segregation agent of the resist.
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申请公布号 |
US2010021703(A1) |
申请公布日期 |
2010.01.28 |
申请号 |
US20090490934 |
申请日期 |
2009.06.24 |
申请人 |
TERAI MAMORU;HAGIWARA TAKUYA;ISHIBASHI TAKEO;ISHIBASHI MIWAKO |
发明人 |
TERAI MAMORU;HAGIWARA TAKUYA;ISHIBASHI TAKEO;ISHIBASHI MIWAKO |
分类号 |
B32B3/10;G03F7/20;G03F7/42 |
主分类号 |
B32B3/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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