发明名称 |
MANUFACTURING METHOD OF TEMPLATE FOR NANOIMPRINT LITHOGRAPHY |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a nanoimprint lithography template which can manufacture a template with residue defect in which the height positions of top faces of projections in the transfer pattern are aligned in order to prevent the height positions of the top faces of the projections of the transfer pattern from changing in a defect correction process of the nanoimprint lithography template, more specifically, a process for checking a shape of the transfer pattern after correction by scanning an electron ray.SOLUTION: A residue defect part of a hard mask pattern is corrected by leaving the hard mask pattern formed on a main face of a substrate. A residue defect part of a transfer pattern exposed by correction is corrected. Correction of the residue defect part of the transfer pattern is checked and the hard mask pattern is removed to solve the problem. |
申请公布号 |
JP2014029993(A) |
申请公布日期 |
2014.02.13 |
申请号 |
JP20130131757 |
申请日期 |
2013.06.24 |
申请人 |
DAINIPPON PRINTING CO LTD |
发明人 |
YOSHIKAWA SHINGO;INAZUKI YUICHI;NISHIGUCHI TAKAO |
分类号 |
H01L21/027;B29C59/02 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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