| 摘要 |
PROBLEM TO BE SOLVED: To decrease on-resistance of a silicon carbide semiconductor device.SOLUTION: When forming a gate insulating film on a silicon carbide substrate 3, first, oxidation treatment using oxidation reaction gas is applied to the silicon carbide substrate 3, thereby, the gate insulating film is formed on a surface of the silicon carbide substrate 3. Next, nitriding treatment using nitriding reaction gas is applied to the silicon carbide substrate 3 formed with the gate insulating film. These the oxidation treatment and the nitriding treatment are continuously performed in the same diffusion furnace 1 while maintaining temperature of 1200°C or more and 1300°C or less.SELECTED DRAWING: Figure 1 |
