NITRIDE SEMICONDUCTOR DEVICE

摘要

This nitride semiconductor device is provided with: a source electrode (5) and a drain electrode (6); a first gate electrode (7) of a first transistor element (101); a second gate electrode (8) of a second transistor element (102); and a lower insulating film (10) that is formed on a nitride semiconductor layer (9) surface between the second gate electrode (8) and the drain electrode (6). The first transistor element (101) and the second transistor element (102) are cascode-connected with each other, and an upper insulating film (14) covering at least a part of a region between the first gate electrode (7) and the second gate electrode (8) is formed, said upper insulating film having a relative dielectric constant that is smaller than that of the lower insulating film (10).