Light emitting device having multi-layered electrode structure

摘要

A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

主权项

1. A light-emitting device, comprising:
a conductive substrate; a semiconductor stacking layer comprising a first semiconductor layer on the conductive substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; a mirror layer on the semiconductor stacking layer; a first barrier layer on the mirror layer; and a bonding layer on the first barrier layer, wherein the bonding layer comprises a first metal having a thickness between 1000 Å and 42000 Å, and wherein the first barrier layer is between the mirror layer and the bonding layer, the first barrier layer comprises a plurality of first metal layers and a plurality of second metal layers alternately stacked, the material of the plurality of first metal layers is different from that of the plurality of second metal layers, and a thickness of each of the plurality of first metal layers is thicker than a thickness of each of the plurality of second metal layers.