发明名称 |
Nitride semiconductor light-emitting device |
摘要 |
? A nitride semiconductor light-emitting device has an active layer of a single-quantum well structure or multi-quantum well made of a nitride semiconductor containing indium and gallium. A first p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided in contact with one surface of the active layer. A second p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided on the first p-type clad layer. The second p-type clad layer has a larger band gap than that of the first p-type clad layer. An n-type semiconductor layer is provided in contact with the other surface of the active layer.
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申请公布号 |
US2002167019(A1) |
申请公布日期 |
2002.11.14 |
申请号 |
US20010973817 |
申请日期 |
2001.10.11 |
申请人 |
NICHIA CHEMICAL INDUSTRIES, LTD. |
发明人 |
NAKAMURA SHUJI;NAGAHAMA SHINICHI;IWASA NARUHITO;KIYOKU HIROYUKI |
分类号 |
H01L33/06;H01L33/32;(IPC1-7):H01L33/00;H01L29/06;H01L31/032 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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