| 摘要 |
A thin film transistor array includes first and second gate lines and a storage electrode line with a storage electrode formed on a substrate, where a gate insulating layer covers the gate and the storage electrode lines, a data line crossing the first and second gate lines in an insulating manner and a conductor are formed on the gate insulating layer, a passivation layer covers the data line and the conductor, and a pixel electrode is formed on the passivation layer with first and second sub-pixel electrodes connected to the first and second gate lines, respectively, the conductor is connected to the first sub-pixel electrode, and overlaps the storage electrode, and as the second sub-pixel electrode overlaps the conductor overlapping the storage electrode, connection capacitors of the first and second sub-pixel electrodes are formed without deteriorating the aperture ratio, and the charging up is induced at the first sub-pixel electrode when the second sub-pixel electrode is inverted in polarity.
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