| 摘要 |
A programmable read-only memory is provided to reduce the area occupied by a memory, by reducing the number of large-sized devices to pass a high current for a programming operation. A programmable read-only memory includes at least one memory cell. The memory cell or each memory cell includes a transistor(4) having a main conduction path and a control electrode. At least one first electronic switch(24) is for insulating the control electrode of the memory cell electrically during a programming step. A sufficient voltage is applied to melt the main conduction path when the control electrode is insulated and not enough to melt the main conduction path when the control electrode is not insulated, to both ends of the main conduction path of the memory cell.
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