| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method thereof capable of suppressing the formation of an electric charge storage region beside a word line or the formation of an oxidized silicon nitride film between the word lines. SOLUTION: This invention provides the semiconductor device comprising an ONO film 20 including a trap layer 16 formed on a semiconductor substrate 10, the word lines 22 formed on the ONO film 20, and silicon oxide layers 24 formed on the semiconductor substrate 10 between the word lines 22 and between tunnel oxide films 14. COPYRIGHT: (C)2008,JPO&INPIT
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