| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS transistor capable of being wholly uniformly operated. SOLUTION: The MOS transistor 100 formed on the rectangular region 60 of a substrate with a source region 12 and a drain region 13 alternately provided in a rectangle shape comprises a first layer source interconnection 32 connected to the source region, a first layer drain interconnection 33 connected to the drain region, a second layer source interconnection pattern 52 connected to the first layer source interconnection, and a second layer drain interconnection pattern 53 connected to the first layer drain interconnection. The second layer source interconnection pattern and the second layer drain interconnection pattern are composed as combined symmetrically with respect to a central point of the rectangular region. The combined shape part includes a part extending from each side of two facing angles of the rectangular region so as to devide each interconnection of the first layer source interconnection and the first layer drain interconnection, and a part in approximately parallel with each of the orthogonal two sides of the rectangular region. COPYRIGHT: (C)2008,JPO&INPIT
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